2011. 7. 13 1/2 semiconductor technical data kta1046 epitaxial planar pnp transistor revision no : 4 industrial use. general purpose application. features h low collector saturation voltage : v ce(sat) =-1.0v(max.) at i c =-2a, i b =-0.2a. h complementary to ktc2026. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current i c -3 a base current i b -0.5 a collector power dissipation ta=25 ? p c 2 w tc=25 ? 20 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-60v, i e =0 - - -1 a emitter cut-off current i ebo v eb =-7v, i c =0 - - -1 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -60 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-0.5a 100 - 300 h fe (2) v ce =-5v, i c =-3a 20 - - collector emitter saturation voltage v ce(sat) i c =-2a, i b =-0.2a - -0.25 -1.0 v base-emitter voltage v be v ce =-5v, i c =-0.5a - -0.7 -1.0 v transition frequency f t v ce =-5v, i c =-0.5a - 30 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 45 - pf switching time turn-on time t on - 0.4 - s storage time t stg - 1.7 - fall time t f - 0.5 - note : h fe (1) classification y:100 q 200, gr:150 q 300
2011. 7. 13 2/2 kta1046 revision no : 4
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